Founded in 2011, Aledia develops and manufactures innovative light-emitting diodes (LEDs) based on a unique 3D architecture using gallium-nitride (GaN)-on-silicon nanowires. The technology uses standard silicon wafers with diameters of 8 inches (200 mm) and existing CMOS wafer-fabrication processes and tools, enabling production of LEDs at 25 percent of the cost of traditional planar LEDs.  Aledia’s game-changing WireLED™ GaN-on-silicon nanowire technology, developed at the research laboratories of CEA-LETI in France, represents a cost-disruptive solution to the key challenge facing the very large and growing LED market. By resolving the important cost issue, Aledia is working to make LEDs available at substantially lower prices than are found today.